Integrated high power semiconductor laser
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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-
Dec 7, 2004
Grant Date -
N/A
app pub date -
May 16, 2000
filing date -
Oct 22, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A single-transverse-mode laser has a resonance cavity with an output end. A gain medium is disposed within the resonance cavity. The gain medium portion includes an active portion. A mode expander portion is disposed within the resonance cavity and operationally coupled to the gain medium portion and the output end of the resonance cavity. A single-mode waveguide portion is disposed with the resonance cavity between and operationally coupled to the mode expander portion of the output end of the resonance cavity. The single-mode waveguide portion is a passive portion. The gain medium portion, the mode expander portion and the single-mode waveguide portion are integrally formed.
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