Thermoelectric device with Si/SiC superlattice N-legs
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United States of America Patent
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Dec 7, 2004
Grant Date -
Jun 19, 2003
app pub date -
Dec 12, 2001
filing date -
Dec 12, 2001
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Abstract
A superlattice thermoelectric device. The device includes p-legs and n-legs, each leg includes a large number of at least two different very thin alternating layers of elements. The n-legs in the device includes alternating layers of silicon and silicon carbide. In preferred embodiments p-legs include a superlatice of B-C layers, with alternating layers of different stoichiometric forms of B-C. This preferred embodiment is designed to produce 20 Watts with a temperature difference of 300 degrees C. with a module efficiency of about 30 percent. The module is about 1 cm thick with a cross section area of about 7 cm.sup.2 and has about 10,000 sets of n and p legs each set of legs being about 55 microns thick and having about 5,000 very thin layers (each layer about 10 nm thick).
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