Light receiving element array having isolated pin photodiodes
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United States of America Patent
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Dec 7, 2004
Grant Date -
Jun 12, 2003
app pub date -
Sep 23, 2002
filing date -
Jul 18, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A light-receiving element array is provided in which the degradation of characteristic thereof due to the crosstalk may be prevented. An n-InP layer, an i-InGaAs layer, and an n-InP layer are stacked on an n-InP substrate. Zn is diffused into the topmost n-InP layer to form a p-type diffused region, resulting in a pin-photodiode. A passivation layer is deposited on the structure to a thickness such that a nonreflective condition is satisfied. On the passivation film, a light-shielding film is provided so as to cover the area between light-receiving elements.
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