High-frequency semiconductor device
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United States of America Patent
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-
Nov 30, 2004
Grant Date -
Oct 3, 2002
app pub date -
Mar 6, 2002
filing date -
Mar 30, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A structure for eliminating the influence of an antenna line connected to the patch electrode on the antenna characteristics of a patch antenna built in an MMIC is disclosed. A through-hole is formed in the antenna ground plane which is provided under the patch electrode with an interlayer insulation film therebetween, the antena line is provided in the side opposite to the patch electrode with respect to the antena ground plane, and the patch electrode and antenna line are connected to each other with a conductor passing through the trough-hole.
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