Method for isolation of wafer support-related crystal defects
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 30, 2004
Grant Date -
Feb 5, 2004
app pub date -
Jul 30, 2002
filing date -
Jul 30, 2002
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of measurement of wafers to isolate wafer support-related defects involves Scanning Infrared Depolarization (SIRD) measurement of multiple processed wafers, each oriented differently on the wafer support, to obtain and characterize depolarization stress defects. The method mounts first and second wafers in first and second orientations and performs a SIRD scan of each. The results are correlated to isolate orientation dependent defects from non-orientation dependent defects. Orientation dependent defects are characterized as wafer support-related defects. Analysis of such wafer support-related defects may then be used to identify and correct the corresponding wafer support defect.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully