Method of treating an insulting layer
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United States of America Patent
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Nov 30, 2004
Grant Date -
Oct 30, 2003
app pub date -
May 16, 2003
filing date -
Feb 26, 1999
priority date (Note) -
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Abstract
This invention relates to a method of heating an insulating layer, such as is found in semiconductor devices, in which a formation has been etched through a layer of resist comprising reactive etching the resist, inhibiting absorption of or removing water vapour and/or oxygen at the exposed surfaces of the etched formation and filling the formation with conductive metal in the absence of said water vapour and/or oxygen.
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