Particle beam biaxial orientation of a substrate for epitaxial crystal growth
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United States of America Patent
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Nov 23, 2004
Grant Date -
Jun 20, 2002
app pub date -
Dec 15, 2000
filing date -
Dec 15, 2000
priority date (Note) -
Expired
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Abstract
The invention provides a method of increasing the extent of a desired biaxial orientation of a previously formed non-single-crystal structure by contacting said structure with an oblique particle beam thereby forming in the structure a nucleating surface having increased desired biaxial orientation. The method can further include a step of epitaxially growing the crystalline formation using the nucleating surface to promote the epitaxial growth. The invention also provides a crystalline structure containing a nucleating surface formed by contacting a previously formed non-single-crystal structure with an oblique particle beam, from 0 to 10 adjacent orientation-transmitting layers, and a crystalline active layer. In this structure, the active layer is oriented in registry with the nucleating surface.
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