Method for forming SIO2 by chemical vapor deposition at room temperature
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United States of America Patent
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Nov 16, 2004
Grant Date -
Feb 14, 2002
app pub date -
Jun 29, 2001
filing date -
Jun 29, 2000
priority date (Note) -
Expired
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Abstract
Silicon dioxide (SiO.sub.2) films are deposited at room temperature using a chemical vapor deposition (CVD) reaction catalyzed by ammonia or a Lewis base. The SiO.sub.2 film growth is accomplished through the reaction of water and certain silicon precursors. Examples of these reactions include the SiCl.sub.4 +2H.sub.2 O.fwdarw.SiO.sub.2 +4HCl or Si(OR).sub.4 +2H.sub.2 O.fwdarw.SiO.sub.2 +4ROH reactions and catalyzed with ammonia (NH.sub.3) or other Lewis bases. The NH.sub.3 catalyst lowered the required temperature for SiO.sub.2 CVD from >900 K to 313-333 K and reduced the SiCl.sub.4 and H.sub.2 O pressures required for efficient SiO.sub.2 CVD from several Torr to <500 mTorr.
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