Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof
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United States of America Patent
Stats
-
Nov 16, 2004
Issued Date -
N/A
app pub date -
Jul 9, 1999
filing date -
Jul 10, 1998
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The present invention is related to a method of crystallizing an amorphous silicon layer and a crystallizing apparatus thereof which crystallize an amorphous silicon layer using plasma. The present invention includes the steps of depositing an inducing substance for silicon crystallization on an amorphous silicon layer by plasma exposure, and carrying out annealing on the amorphous silicon layer to the amorphous silicon layer. The present invention includes a chamber having an inner space, a substrate support in the chamber wherein the substrate support supports a substrate, a plasma generating means in the chamber wherein the plasma generating means produces plasma inside the chamber, and a heater at the substrate support wherein the heater supplies the substrate with heat.
First Claim
Other Claims data not available
