Epitaxially grown compound semiconductor film and compound semiconductor multi-layer structure
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Nov 9, 2004
Grant Date -
Oct 2, 2003
app pub date -
Mar 27, 2003
filing date -
Mar 28, 2002
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The present invention provides an epitaxially grown compound semiconductor film having a low density of crystal defects which are generated during the course of crystal growth of a compound semiconductor. The present invention also provides a compound semiconductor multi-layer structure including an n-type InP substrate, an n-type InP buffer layer, an undoped InGaAs light-absorbing layer, and an n-type InP cap layer, the layers being successively grown on the substrate through MOCVD. In the InGaAs layer, the compositional ratio of In/Ga is cyclically varied in a thickness direction (cyclic intervals: 80 nm) so as to fall within a range of .+-.2% with respect to a predetermined compositional ratio that establishes lattice matching between InGaAs and InP; specifically, within a range between 0.54/0.46 (i.e., In.sub.0.54 Ga.sub.0.46 As) and 0.52/0.48 (i.e., In.sub.0.52 Ga.sub.0.48 As)
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully