Method for fabricating BICMOS semiconductor devices
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United States of America Patent
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Nov 9, 2004
Grant Date -
Mar 25, 2004
app pub date -
Dec 13, 2002
filing date -
Sep 24, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method for fabricating a semiconductor device is described in which isolation layers and a collector of a BJT are simultaneously formed by an epitaxtial growth process during a process of fabricating a BiCMOS. The method for fabricating a semiconductor device of the present invention includes processes of forming a first mask layer on a semiconductor substrate, etching a predetermined portion of the semiconductor substrate with predetermined depth using the first mask layer, forming a first isolation layer on a side face of the etched semiconductor substrate, forming a first epitaxial layer doped with a plurality of layers by epitaxial growth of the exposed portion of the semiconductor substrate, forming a second mask layer on the first epitaxial layer, and forming a second epitaxial layer by epitaxial growth of a portion of the first epitaxial layer.
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