Method for depositing silicon nitride
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United States of America Patent
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Nov 2, 2004
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N/A
app pub date -
Nov 20, 2002
filing date -
Nov 20, 2002
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Abstract
A method is provided which includes creating a plasma from a gas mixture including diatomic nitrogen gas and a gas comprising silicon. In addition, the method includes exposing a microelectronic topography to the plasma to form a silicon nitride layer thereon. In some cases, the method may include forming the silicon nitride layer at a temperature less than approximately 300.degree. C. Furthermore, the method may include subsequently processing the microelectronic topography at a temperature greater than or equal to approximately 250.degree. C. such that a stress change of less than approximately 1.0.times.10.sup.10 dynes/cm.sup.2 occurs within the silicon nitride layer. In addition, a microelectronic topography is provided which has a silicon nitride layer with a concentration of diatomic hydrogen that is at least one order of magnitude lower than a concentration of diatomic hydrogen within a silicon nitride layer formed from a plasma generated from ammonia.
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