Adjusting of defect profiles in crystal or crystalline-like structures
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United States of America Patent
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Oct 26, 2004
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app pub date -
Nov 18, 2002
filing date -
May 18, 2000
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Abstract
The invention relates to a method for generating defect profiles in a crystal or crystalline structure of a substrate, preferably a semiconductor, during a thermal treatment in a process chamber. According to the inventive method, a concentration and/or a density distribution of defects is controlled with at least one reactive component each depending on at least two process gases that differ in their composition. At least two of the process gases independently act upon at least two different surfaces of the substrate.
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