Growth of ZnO film using single source CVD
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United States of America Patent
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Oct 26, 2004
Grant Date -
Sep 25, 2003
app pub date -
Apr 9, 2003
filing date -
Jun 6, 2000
priority date (Note) -
Expired
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Abstract
The present invention relates to a method of growing a ZnO film using chemical vapour deposition (CVD), and to a ZnO film grown according to the method. The method includes providing a precursor in vapour form, the precursor substantially comprising Zn.sub.4 O(O.sub.2 CNR.sub.A R.sub.B).sub.6, where R.sub.A and R.sub.B are any combination of akyl or perfluoroalkyl groups, and decomposing at least some of the vapour at the surface of the substrate such that the film of zinc oxide forms. An advantage of using this precursor material is that, unlike in the prior art, no deliberate introduction of water vapour to improve christallographic orientation is required. Higher purities in oxide films are produced.
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