Semiconductor integrated circuit device
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United States of America Patent
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Oct 19, 2004
Grant Date -
Aug 28, 2003
app pub date -
Feb 10, 2003
filing date -
Feb 22, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention provides a semiconductor integrated circuit device equipped with an input circuit capable of stably performing a high-speed operation up to a low voltage. A rail to rail circuit constitutes a differential input circuit, and a circuit similar to such a differential input circuit is used to constitute a bias circuit. A pair of output terminals of a differential circuit constituting such a bias circuit is commonly connected to form a bias voltage corresponding to a middle point. The bias voltage is supplied to the gates of current source MOSFET and the gates of cascode-connected MOSFETs in the differential input circuit, and the gates of the corresponding current source MOSFETs and cascode-connected MOSFETs in the bias circuit corresponding to itself.
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