Heterojunction bipolar transistor having wide bandgap material in collector
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United States of America Patent
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Oct 19, 2004
Grant Date -
Apr 8, 2004
app pub date -
Oct 8, 2002
filing date -
Oct 8, 2002
priority date (Note) -
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Abstract
The safe operating area (SOA) in a heterojunction bipolar transistor is improved by inserting a material between the collector and subcollector of the transistor with the insertion layer being a material having a wider energy bandgap than the material of the collector. The insertion layer increases the breakdown field at the collector-subcollector junction and thereby increases the Kirk effect induced breakdown voltage.
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