Method of preparing indium phosphide heterojunction bipolar transistors
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United States of America Patent
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Oct 5, 2004
Grant Date -
Sep 12, 2002
app pub date -
Jan 8, 2002
filing date -
Jan 8, 2001
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Abstract
InP heterojunction bipolar transistors having a base layer of InGaAs which are compositionally graded to engineer the bandgap of the base layer to be larger at the emitter/base junction than at the collector/base junction. The graded bandgap can increase DC current gain and speed of the device. A metalorganic chemical vapor deposition method of preparing InP heterojunction bipolar transistors having a base layer with a relatively high concentration of carbon dopant. The high carbon dopant concentration lowers the base sheet resistivity and turn-on voltage of the device.
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