III-nitride light emitting devices fabricated by substrate removal
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United States of America Patent
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Oct 5, 2004
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app pub date -
Jul 29, 2003
filing date -
Feb 5, 1999
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Abstract
A III-nitride light-emitting structure including a p-type layer, an n-type layer, and a light emitting layer is grown on a growth substrate. The III-nitride light-emitting structure is wafer bonded to a host substrate, then the growth substrate is removed. In some embodiments, a first electrical contact and first bonding layer are formed on the III-nitride light-emitting structure. A second bonding layer is formed on the host substrate. In such embodiments, wafer bonding the III-nitride light emitting structure to the host substrate comprises bonding the first bonding layer to the second bonding layer. After the growth substrate is removed, a second electrical contact may be formed on a side of the III-nitride light-emitting device exposed by removal of the growth substrate.
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