Active matrix organic light-emitting diode and manufacturing method thereof
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United States of America Patent
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Sep 28, 2004
Grant Date -
N/A
app pub date -
Aug 5, 2003
filing date -
Apr 24, 2003
priority date (Note) -
Expired
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Abstract
An active matrix organic light-emitting diode and manufacturing method thereof is provided. A thin film transistor having a gate, a source and a drain is formed over a substrate. An anode layer is formed over the substrate such that the anode layer connects electrically with the source terminal of the thin film transistor. An organic layer is formed to cover the anode layer and the thin film transistor. The organic layer between the source and the drain serves as a channel region of the thin film transistor. A cathode layer is formed over the organic layer. Since the molecules inside the organic layer are aligned in a direction from the source to the drain and perpendicular to a direction from the anode layer to the cathode layer, electron mobility at the channel region is enhanced and the emitting efficiency of the diode is increased.
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