Contact planarization using nanoporous silica materials
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United States of America Patent
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Sep 28, 2004
Grant Date -
Nov 14, 2002
app pub date -
Oct 26, 2001
filing date -
Sep 9, 1999
priority date (Note) -
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Abstract
A process for forming a substantially planarized nanoporous dielectric silica coating on a substrate suitable for preparing a semiconductor device, and semiconductor devices produced by the methods of the invention. The process includes the steps of applying a composition that includes at least one silicon-based dielectric precursor to a substrate, and then, (a) gelling or aging the applied coating, (b) contacting the coating with a planarization object with sufficient pressure to transfer a planar impression to the coating without substantially impairing formation of desired nanometer-scale pore structure, (c) separating the planarized coating from the planarization object, (d) curing said planarized coating; wherein steps (a)-(d) are conducted in any one of the following sequences: (a), (b), (c) and (d); (a), (d), (b) and (c); (b), (a), (d) and (c); and (b), (c), (a) and (d).
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