Electro-optical device and thin film transistor and method for forming the same
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United States of America Patent
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Sep 28, 2004
Issued Date -
N/A
app pub date -
Dec 11, 2001
filing date -
Jun 19, 1991
priority date (Note) -
Expired
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Abstract
A method of fabricating silicon TFTs (thin-film transistors) is disclosed. The method comprises a crystallization step by laser irradiation effected after the completion of the device structure. First, amorphous silicon TFTs are fabricated. In each of the TFTs, the channel formation region, the source and drain regions are exposed to laser radiation illuminated from above or below the substrate. Then, the laser radiation is illuminated to crystallize and activate the channel formation region, and source and drain regions. After the completion of the device structure, various electrical characteristics of the TFTs are controlled. Also, the amorphous TFTs can be changed to polysilicon TFTs.
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