Method for forming thin film with a gas cluster ion beam
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United States of America Patent
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Sep 28, 2004
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N/A
app pub date -
Jan 27, 2003
filing date -
Sep 6, 1994
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Expired
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Abstract
A method of forming a thin film on the surface of a substrate such as silicon, in which a gas cluster (which is a massive atomic or molecular group of a reactive substance taking the gaseous form at room temperature under atmospheric pressure) is formed and then ionized, and the cluster ions are then irradiated onto a substrate surface under an acceleration voltage to cause a reaction. It is possible to form a high quality ultra-thin film having a very smooth interface, without causing any damage to the substrate, even at room temperature.
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