Three-terminal avalanche photodiode
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United States of America Patent
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Sep 21, 2004
Grant Date -
Dec 11, 2003
app pub date -
Jun 7, 2002
filing date -
Jun 7, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An avalanche photodiode (APD) includes an absorption layer above the multiplication layer, where the thickness of the multiplication layer is defined through a growth process. The APD can also have a third-terminal, or peripheral ring terminal, for collecting charge carriers generated outside the optically-active region of the device. Undesirable dark current can thus be better managed during the life of the device. The three-terminal design may also be utilized in other photodetectors, including PIN diodes.
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