Method of producing an SOI wafer
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United States of America Patent
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Sep 21, 2004
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N/A
app pub date -
Jun 28, 2002
filing date -
Jun 28, 2002
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Abstract
A semiconductor wafer manufacturing is disclosed wherein an SOI wafer is produced by annealing a polysilicon layer deposited on a substrate wafer in an oxygen-containing ambient, and annealing the wafer at high temperatures to form an oxide layer at the interface of the substrate wafer and polysilicon layer. During the high temperature anneal, the polycrystalline silicon layer also recrystallizes to a monocrystalline state, and replicates the lattice structure of the substrate wafer.
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