Critical doping in high-Tc superconductors for maximal flux pinning and critical currents
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United States of America Patent
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Aug 31, 2004
Grant Date -
Aug 28, 2003
app pub date -
Dec 20, 2002
filing date -
Jun 18, 1998
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Expired
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Abstract
A method for maximising critical current density (J.sub.c) of high temperature superconducting cuprate materials (HTSC) which comprises controlling the doping state or hole concentration of the materials to be higher than the doping state or hole concentration of the material that provides a maximum superconducting transition temperature (T.sub.c), and to lie at about a value where the normal-state pseudogap reduces to a minimum. Jc is maximised1 at hole concentration p.apprxeq.0.19. HTSC compounds are also claimed.
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