High power distributed feedback ridge waveguide laser
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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Aug 24, 2004
Grant Date -
Aug 7, 2003
app pub date -
Nov 18, 2002
filing date -
Jan 20, 2000
priority date (Note) -
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status (Latency Note)
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Abstract
A distributed feedback ridge waveguide semiconductor laser diode having a waveguide region with a typical thickness of at least 500 nanometers and an effective refractive index difference between the ridge structure and exposed portions of the waveguide region which surround the ridge structure of less than 0.001. This permits the width of the ridge to be expanded beyond 3.5 microns thus translating directly to higher power outputs at 1.55 .mu.m wavelengths, where carrier diffusion and carrier heating limit current density injected into the active region.
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International Classification(s)
- 2002 Application Filing Year
- H01S Class
- 1316 Applications Filed
- 629 Patents Issued To-Date
- 47.80 % Issued To-Date
Cited Art Landscape
Patent Citation Ranking
- 1 Citation Count
- H01S Class
- 2.97 % this patent is cited more than
- 21 Age
