Infrared generation in semiconductor lasers
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United States of America Patent
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Aug 24, 2004
Grant Date -
Apr 11, 2002
app pub date -
Sep 10, 2001
filing date -
Sep 8, 2000
priority date (Note) -
Expired
status (Latency Note)
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Abstract
Infrared generation is disclosed. A first laser field having a first frequency associated with a first interband transition is generated. A second laser field having a second frequency associated with a second interband transition is generated. The generation of the first laser field occurs substantially simultaneously with the generation of the second laser field. A third laser field is generated from the first laser field and the second laser field. The third laser field has a third frequency associated with an intersubband transition. The third frequency is substantially equivalent to a difference between the second frequency and the first frequency.
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