Protection of the logic well of a component including an integrated MOS power transistor

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United States of America Patent

PATENT NO 6781804
SERIAL NO

09625116

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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The present invention relates to a structure for ground connection on a component including a vertical MOS power transistor and logic components, the substrate of a first type of conductivity of the component corresponding to the drain of the MOS transistor and the logic components being formed in at least one well of the second type of conductivity and on the upper surface side of the substrate. In the logic well, a region of the first type of conductivity is formed, on which is formed a metallization, to implement, on the one hand, an ohmic contact, and on the other hand, a rectifying contact.

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Patent Owner(s)

Patent OwnerAddress
SGS-THOMSON MICROELECTRONICS S AGINTILLY

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Claverie, Isabelle Marseille, FR 3 9

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  • 3 Citation Count
  • H02H Class
  • 4.49 % this patent is cited more than
  • 21 Age
Citation count rangeNumber of patents cited in rangeNumber of patents cited in various citation count ranges77549144411101 - 1011 - 2021 - 3031 - 4041 - 5051 - 6081 - 90100 +05101520253035404550556065707580

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