Protection of the logic well of a component including an integrated MOS power transistor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
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Aug 24, 2004
Issued Date -
N/A
app pub date -
Jul 25, 2000
filing date -
Jun 17, 1997
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention relates to a structure for ground connection on a component including a vertical MOS power transistor and logic components, the substrate of a first type of conductivity of the component corresponding to the drain of the MOS transistor and the logic components being formed in at least one well of the second type of conductivity and on the upper surface side of the substrate. In the logic well, a region of the first type of conductivity is formed, on which is formed a metallization, to implement, on the one hand, an ohmic contact, and on the other hand, a rectifying contact.
First Claim
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Family

- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
Patent Owner | Address | |
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SGS-THOMSON MICROELECTRONICS S A | GINTILLY |
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
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Claverie, Isabelle | Marseille, FR | 3 | 9 |
# of filed Patents : 3 Total Citations : 9 |
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Patent Citation Ranking
- 3 Citation Count
- H02H Class
- 4.49 % this patent is cited more than
- 21 Age
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Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
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Fee | Large entity fee | small entity fee | micro entity fee |
---|---|---|---|
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
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