Trench DMOS transistor having improved trench structure
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United States of America Patent
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Aug 24, 2004
Issued Date -
N/A
app pub date -
Mar 11, 2002
filing date -
Mar 11, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A trench DMOS transistor cell is provided that includes a substrate of a first conductivity type and a body region located on the substrate, which has a second conductivity type. At least one trench extends through the body region and the substrate. An insulating layer lines the trench and a conductive electrode is placed in the trench overlying the insulating layer. A source region of the first conductivity type is located in the body region adjacent to the trench. The trench has sidewalls that define a polygon in the plane of the substrate so that adjacent sidewalls contact one another at an angle greater than 90 degrees.
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