Non-gated thyristor device
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United States of America Patent
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Aug 24, 2004
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N/A
app pub date -
Apr 9, 2003
filing date -
Apr 9, 2003
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Abstract
A semiconductor device with two epitaxial layers formed on a substrate. The middle layer of epitaxial material can be formed thin and with an appropriate doping concentration to provide a low avalanche breakdown voltage with a negative resistance characteristic. The top layer of epitaxial material is doped with the same concentration as the substrate to provide a two-terminal thyristor device with symmetrical bidirectional operating characteristics.
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