High temperature annealing of spin coated Pr1-xCaxMnO3 thim film for RRAM application
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 10, 2004
Grant Date -
N/A
app pub date -
Aug 13, 2003
filing date -
Aug 13, 2003
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method of forming a PCMO thin film in a RRAM device includes preparing a substrate; depositing a metal barrier layer on the substrate; forming a bottom electrode on the barrier layer; spin-coating a layer of Pr.sub.1-x Ca.sub.x MnO.sub.3 (PCMO) on the bottom electrode using a PCMO precursor; baking the PCMO thin film in one or more baking steps; annealing the PCMO thin film in a first annealing step after each spin-coating step; repeating the spin-coating step, the baking step and the first annealing step until the PCMO thin film has a desired thickness; annealing the PCMO thin film in a second annealing step, thereby producing a PCMO thin film having a crystalline structure of Pr.sub.1-x Ca.sub.x MnO.sub.3, where 0.2<=X<=0.5; depositing a top electrode; patterning the top electrode; and completing the RRAM device.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully