Importance

Loading Importance Indicators...

Abstract

Disclosed is a nanosized III-nitride compound semiconductor multiple quantum well light-emitting diode, comprising a silicon substrate (100), and an amorphous silicon nitride layer (base) (200) formed on the substrate and including III-nitride compound semiconductor nano grains (230) spontaneously formed therein. The nanosized nitride semiconductor multiple quantum well light-emitting diode and the fabrication method thereof according to the present invention are free from the problems of the conventional III-nitride compound semiconductor epitaxial thin film growth on silicon substrates. Accordingly, a high-quality nanosized III-nitride compound semiconductor multiple quantum well light-emitting diode having no crystalline defect can be provided. Furthermore, the nanosized multiple quantum well light-emitting diode according to the present invention does not require a p-type GaN thin film so that there is no possibility of causing crack that is a problem in the conventional method of fabricating a III-nitride compound semiconductor light-emitting diode using III-nitride epitaxial thin films grown on silicon substrates. In addition, the number of processes of fabricating the diode is remarkably reduced to result in an economical and productive light-emitting diode fabrication process.

Loading the Abstract Image...

First Claim