Single crystal silicon carbide thin film fabrication method and fabrication apparatus of the same
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United States of America Patent
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Aug 10, 2004
Grant Date -
Dec 12, 2002
app pub date -
Jun 3, 2002
filing date -
Jun 6, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
To economically and easily fabricate a single crystal silicon carbide thin film. The apparatus for fabricating a single crystal silicon carbide thin film comprises a film-formation chamber 200 adapted to receive a SOI substrate 100 for film-formation, a gas supply means 300 for supplying various gases G1 to G4 necessary to fabricate a single crystal silicon carbide thin film to the film-formation chamber 200, a gas treatment means 500 for treating argon gas as an inert gas G1, propane gas as a hydrocarbon-based gas G2, hydrogen gas as a carrier gas, and oxygen gas G4 supplied to the film-formation chamber 200, and a temperature control means 400 for controlling the temperature of the film-formation chamber 200.
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