Flash memory element and manufacturing method thereof
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United States of America Patent
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Jul 27, 2004
Grant Date -
Mar 6, 2003
app pub date -
Sep 4, 2002
filing date -
Sep 4, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
The present invention provides a flash memory element and its manufacturing method having improved overall memory characteristics by constituting a double-gate element for improving the scaling down characteristic of flash memory element. With the above double-gate flash memory structure, a flash memory element in the present invention improves the scaling down characteristic and the programming and retention characteristic of a flash memory element.
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