Method of manufacturing semiconductor device having passivation film and buffer coating film
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United States of America Patent
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-
Jul 6, 2004
Grant Date -
Jul 11, 2002
app pub date -
Jul 24, 2001
filing date -
Jan 5, 2001
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An interconnection is formed on a semiconductor substrate having a semiconductor element formed thereon. Next, a passivation film is formed on the semiconductor substrate including the interconnection. Further, a polyimide film, which is served as a buffer coating film, is formed on the passivation film. Further, the polyimide film is patterned. Next, the passivation film is subject to etching while the patterned polyimide film is taken as a mask. Next, a hardened layer, which is formed on the surface of the polyimide film as a result of etching, is removed through ashing process. Next, the semiconductor substrate after ashing process is cured so as to transform the polyimide film into imide.
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