Structure for nitride based laser diode with growth substrate removed
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United States of America Patent
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Jun 29, 2004
Grant Date -
Jun 3, 2004
app pub date -
Mar 26, 1999
filing date -
Dec 30, 1998
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Abstract
A structure for nitride laser diode arrays attached to a thermally conducting substrate is described where the sapphire growth substrate has been removed. The thermally conducting substrate is attached to the side opposite of the sapphire growth substrate.
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