Low-resistance high-magnetoresistance magnetic tunnel junction device with improved tunnel barrier
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United States of America Patent
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Jun 29, 2004
Grant Date -
May 13, 2004
app pub date -
Nov 7, 2002
filing date -
Nov 7, 2002
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Abstract
A low resistance magnetic tunnel junction device, such as a memory cell in a nonvolatile magnetic random access memory (MRAM) array or a magnetoresistive read head in a magnetic recording disk drive, has a titanium oxynitride (TiO.sub.x N.sub.y) layer as the single-layer tunnel barrier or as one of the layers in a bilayer tunnel barrier. In a bilayer barrier the other barrier layer is an oxide or nitride of Al, Si, Mg, Ta, [[Si]] and Y, such as Al.sub.2 O.sub.3, AlN, Si.sub.3 N.sub.4, MgO, Ta.sub.2 O.sub.5, TiO.sub.2, or Y.sub.2 O.sub.3. The Ti barrier material can be alloyed with other known metals, such as Al and Mg, to produce barriers with TiAlO.sub.x N.sub.y and TiMgO.sub.x N.sub.y compositions.
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