Thin film transistor
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United States of America Patent
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Jun 22, 2004
Grant Date -
Oct 2, 2003
app pub date -
Mar 25, 2003
filing date -
Mar 29, 2002
priority date (Note) -
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Abstract
A thin film transistor capable of controlling the dispersion in its characteristic, which includes a glass base plate 2, an insulating foundation film 3 made of silicon dioxide (SiO.sub.2) and formed on the glass base plate 2, a semiconductor layer 4 made of silicon (Si) formed on the insulating foundation film 3, a source region 8 and a drain region 9 which are formed on the semiconductor layer 4 to be separately located on both sides in the longitudinal direction of the semiconductor layer, a channel region 10 existing between the source region 8 and drain region 9, a gate insulating film 6 made of SiO.sub.2 and formed on the channel region 10, and a gate electrode 7 formed on the gate insulating film 6, wherein the taper angle .theta. of the end portion 5 located in the width direction WD of the channel region 10 covered by at least the gate electrode 7 is 60.degree. or more.
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