Photoconductive material imaging element
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United States of America Patent
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Jun 22, 2004
Grant Date -
May 20, 2004
app pub date -
Nov 15, 2002
filing date -
Nov 15, 2002
priority date (Note) -
Expired
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Abstract
A photoconductive material imaging element is described comprising a support and a silver halide emulsion imaging layer comprising silver halide grains which have not been chemically sensitized to optimize formation of latent image Ag.sub.n.sup.o, centers upon imagewise exposure and which are doped with at least 500 deep electron trapping agent dopant centers per grain. In accordance with a preferred embodiment, the photoconductive material imaging element includes a planar support and the non-chemically sensitized, deep electron trapping agent doped silver halide grains comprise tabular grains, preferably with an average grain size equivalent circular diameter of greater than 2 .mu.m, with the long dimensions of the tabular grains primarily oriented parallel to the plane of the support.
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