Method for forming a mask pattern
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United States of America Patent
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-
Jun 15, 2004
Grant Date -
Apr 1, 2004
app pub date -
Sep 30, 2002
filing date -
Sep 30, 2002
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A mask pattern is formed on a substrate by using a solvent absorbent mold having a pattern structure with a relief and an intaglio portion. A mask layer dissolved in a solvent to obtain fluidity is prepared on the substrate. The mold is pressed onto the mask layer with a predetermined pressure, and a portion of the mask layer that contacts with the relief portion of the mold is introduced into the intaglio portion thereof. Then, the mold absorbs the solvent contained in the mask layer to thereby solidify the mask layer. Next, the mold is separated from the substrate and the portion of the mask layer that contacts with the relief portion of the mold is removed, thus finally obtaining the desired minute mask pattern.
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