Method of preventing cracking in optical quality silica layers
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United States of America Patent
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Jun 15, 2004
Grant Date -
Jul 31, 2003
app pub date -
Jan 31, 2002
filing date -
Jan 31, 2002
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Expired
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Abstract
A method for making an integrated photonic device involves depositing buffer, core and cladding layers on the front side of a wafer. A thick tensile stress layer is deposited on the back side of the wafer just prior to performing a high temperature thermal treatment above 600.degree. C. on the cladding layer to prevent the cracking of the layers as a result of the thermal treatment.
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