Low temperature aluminum planarization process
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United States of America Patent
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Jun 8, 2004
Grant Date -
May 15, 2003
app pub date -
Nov 14, 2001
filing date -
Nov 14, 2001
priority date (Note) -
Expired
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Abstract
A low temperature aluminum planarization process. Vias, including high aspect ratio vias, are filled using a liner layer, a seed layer, and a fill layer. The device associated with the via is exposed to a reactive gas prior to applying the fill layer to the device.
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