Method and structure for nitride based laser diode arrays on an insulating substrate
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United States of America Patent
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Jun 1, 2004
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N/A
app pub date -
Dec 30, 1998
filing date -
Dec 30, 1998
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Abstract
A method and structure for nitride based laser diode arrays on an insulating substrate is described. Various contact layouts are used to reduce electrical and thermal crosstalk between laser diodes in the array. A channel structure is used to make a surface emitting laser diode while maintaining a simple contact structure. Buried layers are used to provide a compact and low crosstalk contact structure for the laser diode array.
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