Etching method and etching apparatus of carbon thin film
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United States of America Patent
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Jun 1, 2004
Grant Date -
Sep 19, 2002
app pub date -
Feb 19, 2002
filing date -
Mar 19, 2001
priority date (Note) -
Expired
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Abstract
The present invention relates to etching for removing a carbon thin film formed on a surface of a sample, to prevent a damage on a sample and eliminate the necessity of providing a special device (such as vacuum pump) as is required in plasma etching. A sealed reaction chamber 100A in which a sample 500 formed with a carbon thin film 510 on its surface is to be set, a gas feed means 200A for feeding argon gas which is an inert gas Ar into which a predetermined proportion of oxygen gas O.sub.2 has been mixed from one end to the interior of the reaction chamber 100A, an exhaust means 300A for discharging carbon dioxide gas CO.sub.2 from the downstream side of the inert gas Ar fed from the gas feed means 200A, and a heating means 400A for heating the sample 500 to 550.degree. C. or higher are provided.
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