Semiconductor film, semiconductor device and method of their production
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United States of America Patent
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Jun 1, 2004
Grant Date -
Dec 5, 2002
app pub date -
May 29, 2002
filing date -
Jun 1, 2001
priority date (Note) -
Expired
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Abstract
A semiconductor film having a crystalline structure is formed by using a metal element that assists the crystallization of the semiconductor film, and the metal element remaining in the film is effectively removed to decrease the dispersion among the elements. The semiconductor film or, typically, an amorphous silicon film having an amorphous structure is obtained based on the plasma CVD method as a step of forming a gettering site, by using a monosilane, a rare gas element and hydrogen as starting gases, the film containing the rare gas element at a high concentration or, concretely, at a concentration of 1.times.10.sup.20 /cm.sup.3 to 1.times.10.sup.21 /cm.sup.3 and containing fluorine at a concentration of 1.times.10.sup.15 /cm.sup.3 to 1.times.10.sup.17 /cm.sup.3.
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