Method for making an integrated circuit device including photodiodes
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United States of America Patent
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Jun 1, 2004
Grant Date -
Aug 7, 2003
app pub date -
Feb 1, 2002
filing date -
Feb 1, 2002
priority date (Note) -
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Abstract
Fast and efficient photodiodes with different structures are fabricated using CMOS process technology by adapting transistor structures to form the diode structures. The anode regions of the photodiodes correspond to either PLDD regions of PMOS transistors or P-wells of NMOS transistors to provide two different photodiode structures with different anode region depths and thus different drift region thicknesses. An antireflective film used on the silicon surface of the photodiodes is employed as a silicide-blocking mask at other locations of the device.
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