Thin film deposition apparatus for semiconductor
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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May 25, 2004
Grant Date -
Sep 26, 2002
app pub date -
Nov 30, 2000
filing date -
Dec 17, 1999
priority date (Note) -
Expired
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Abstract
A semiconductor thin film deposition apparatus having at least one reactor in which a wafer is received, a gas supply portion for supplying a reaction gas or inert gas to the reactor, and an exhaust pump for exhausting gas from the reactor, characterized in that the improvement comprises an ozone supply portion for generating ozone as a gas that reacts with the reaction gas, and for supplying the ozone to the reactor.
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