UV-supported thermal treatment of compound semiconductors in RTP systems
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United States of America Patent
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May 18, 2004
Grant Date -
N/A
app pub date -
Apr 11, 2002
filing date -
May 6, 1999
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of formally treating at least one layer for activating foreign atoms passivated in the layer by hydrogen is provided. The at least one layer is heated, in a first time interval of less than 120 seconds, above a first temperature at which a specific sheet resistance of the at least one layer decreases. The at least one layer is heated, in a second time interval which is within the first time interval and is less than 60 seconds, to above a decomposition temperature of the layer. Charge carriers are produced in the at least one layer during at least one third time interval, by electromagnetic radiation, wherein the energy of such electromagnetic radiation is greater than an energy gap of the at least one layer.
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