Method of forming crystalline silicon film
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United States of America Patent
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May 11, 2004
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N/A
app pub date -
Dec 22, 1997
filing date -
Dec 27, 1996
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Expired
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Abstract
To provide a method of promoting quality of crystals and increasing growth rate in a process of carrying out crystal growth in a horizontal direction of an amorphous silicon film by using a catalyst element expediting crystallization, in respect of the amorphous silicon film for carrying out horizontal growth by using a catalyst element of nickel or the like, irregularities of a matrix (underlayer film or substrate) in contact with the amorphous silicon film are made smaller than the film thickness of the amorphous silicon film by which crystal growth occurs substantially entirely by the catalyst element and interruption of growth caused by natural crystallization or the irregularities of a matrix can be prevented.
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