Removal of silicon oxynitride material using a wet chemical process after gate etch processing
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United States of America Patent
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Apr 27, 2004
Grant Date -
N/A
app pub date -
Nov 17, 1999
filing date -
Nov 17, 1999
priority date (Note) -
Expired
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Abstract
A method is presented for forming a transistor gate structure. A gate oxide layer is formed. Gate material is deposited on the gate oxide layer. A layer of silicon oxynitride is deposited on the gate material. The layer of silicon oxynitride, the gate material and the gate oxide layer are etched to form a gate structure. A silicon oxynitride region remains on top of the gate structure. A wet chemical process is performed to remove the silicon oxynitride region from the top of the gate structure. After performing the wet chemical process, spacers are formed around the gate structure.
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